WebNotes through h are on page 8 www.irf.com 1 08/23/02 SMPS MOSFET IRF8010 HEXFET® Power MOSFET VDSS RDS(on) max ID 100V 15mΩ 80Ah PD - 94497 TO-220AB Applications zHigh frequency DC-DC converters zUPS and Motor Control Benefits zLow Gate-to-Drain Charge to Reduce Switching Losses zFully Characterized Capacitance Including Effective … WebIRF610 www.vishay.com Vishay Siliconix S21-0819-Rev. C, 02-Aug-2024 4 Document Number: 91023 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
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WebIRF8010 MOSFET. Datasheet pdf. Equivalent. Type Designator: IRF8010 Type of Transistor: MOSFET Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 260 W. … WebΩ ˘ˇˆ Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
WebThe IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, … WebIRF8010: HEXFET Power MOSFET: International Rectifier: 2: IRF8010S: N-Channel MOSFET: INCHANGE: 3: IRF8010: N-Channel MOSFET: INCHANGE: 4: IRF8010L: N-Channel …
WebIRF8010 LPBF 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package USD 0.934 Add to BOM Datasheet 2 International Rectifier IRF8010 STRL Power Field-Effect Transistor, 75A I (D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor... Add to BOM Datasheet 2 International Rectifier IRF8010 STRR WebIRF8010 Datasheet (PDF) - International Rectifier Description HEXFET Power MOSFET IRF8010 Datasheet (HTML) - International Rectifier IRF8010 Product details Applications • … N-Channel MOSFET Transistor, IRF8010 Datasheet, IRF8010 circuit, IRF8010 data … SMPS MOSFET, IRF8010L datasheet, IRF8010L circuit, IRF8010L data sheet : IRF, … HEXFET Power MOSFET, IRF8010LPBF Datasheet, IRF8010LPBF circuit, IRF8010L… HEXFET Power MOSFET, IRF8010PBF Datasheet, IRF8010PBF circuit, IRF8010PB…
WebIRF8010PbF 2 www.irf.com S D G Static @ T J = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– …
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